Thanks to the development, this enables the manufacturing of 128GB DRAM modules without the use of Through Silicon Via (TSV) process. Samsung was keen to note that this also reduces power consumption by around 10 percent compared to 128GB modules based on 16Gb DRAM. Thanks to 12nm-class 32Gb RAM, it is now possible to make 1TB DRAM modules, targeting AI and big data markets.
“With our 12nm-class 32Gb DRAM, we have secured a solution that will enable DRAM modules of up to 1-terabyte (TB), allowing us to be ideally positioned to serve the growing need for high-capacity DRAM in the era of AI (Artificial Intelligence) and big data,” said SangJoon Hwang, Executive Vice President of DRAM Product & Technology at Samsung Electronics. “We will continue to develop DRAM solutions through differentiated process and design technologies to break the boundaries of memory technology.”
The 12nm-class 32Gb DDR5 DRAM is an optimal solution for power efficiency implementation, such as data centers. Samsung notes that it plans to continue expanding its lineup of high-capacity DRAM.
Mass production of the new 12nm-class 32Gb DDR5 DRAM is scheduled to big by the end of this year.