According to Samsung, the new 24Gb GDDR7 DAM is developed on 10nm-class DRAM, increasing cell density by 50 percent while maintaining the same package size as the predecessor. In addition to the advanced process node, Samsung also implemented a three-level Pulse-Amplitude Modulation (PAM3) signaling, raising the speed of DRAM to up to 42.5Gbps, depending on the usage environment, which is a 25 percent improvement compared to the previous generation.

In order to achieve the aforementioned 30 percent in power efficiency, Samsung has also implemented some technologies previously used in mobile products, including clock control management and dual VDD design. It also features power gating design techniques n order to minimize current leakage and provide additional operational stability during high-speed operations.

According to Samsung, the validation for the 24Gb GDDR7 DRAM will begin this year from major GPU customers with plans for commercialization early next year.